Structural Investigation of Si(111) √3×√3-In by Low-Energy Ion-Scattering Spectroscopy
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10R)
- https://doi.org/10.1143/jjap.28.1742
Abstract
The atomic structure of Si(111) √3×√3-In was investigated by low energy ion scattering spectroscopy with 1 keV He+ ions. Azimuthal angular distributions of scattered ions suggest that the In atoms are located in the three-fold sites on top of the second layer Si atoms. Comparing the experimental distribution as a function of the incident angle with the calculation using the Thomas-Fermi-Molière potential taking of the thermal vibrations, the Debye temperature of the surface In atoms and the bond length between the In atom and the first layer Si atom were estimated.Keywords
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