Base transit time for SiGe-base heterojunction bipolar transistors
- 1 August 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (16) , 1408-1410
- https://doi.org/10.1049/el:19910884
Abstract
The base transit time expressions for SiGe base heterojunction bipolar transistors are presented including the accelerating field effects due to the base bandgap grading and doping grading, and the retarding field (opposing drift field) effect from the graded boron profile down towards the emitter. It is found that the retarding field exhibits 40–80% contribution to the base transit time, depending on the boron concentration near the emitter. The results of base transit time from these analytic expressions are unambiguously supported by the published simulation data.Keywords
This publication has 3 references indexed in Scilit:
- A Si/SiGe heterojunction bipolar transistor with undoped SiGe spacer for CRYO-BiCMOS circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The impact of non-equilibrium transport on breakdown and transit time in bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SiGe-base heterojunction bipolar transistors: physics and design issuesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002