Undulation Spectra of GaP Associated with the Isoelectronic Trap N
- 19 July 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (3) , 139-142
- https://doi.org/10.1103/physrevlett.27.139
Abstract
We describe "undulation spectra" in the luminescence of the isoelectronic trap N in GaP codoped with shallow acceptors. These novel spectra are shown to arise from an interference effect in the wave functions of electrons, arising from coherently scattering potentials due to pairs of N traps and neutral acceptors. The general phenomenon can occur in any indirect band-gap material.Keywords
This publication has 3 references indexed in Scilit:
- Toward a Theory of Isoelectronic Impurities in SemiconductorsPhysical Review B, 1968
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Pair Spectra and "Edge" Emission in Gallium PhosphidePhysical Review B, 1964