Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures
- 1 June 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 15 (6) , 362-368
- https://doi.org/10.1109/t-ed.1968.16191
Abstract
Measurements of apparent threshold voltages for conduction of bothn-p-nandp-n-pMOS-Keywords
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