Variable-area resonant tunnelling diodes using implanted gates

30 July 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (16) , 1535-1537
https://doi.org/10.1049/el:19920975

Abstract

A new fabrication technique is reported for variable-area resonant tunnelling diodes in which control is achieved by means of a reverse-biased, implanted pn junction surrounding the device. The characteristics of such devices are shown and interpreted.

Keywords

VARIABLE-AREA
IMPLANTED P-N JUNCTION
FABRICATION TECHNIQUE
RESONANT TUNNELLING DIODES
REVERSE-BIASED JUNCTION
IMPLANTED GATES
RTD

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