Capacitance/voltage characteristics of semiconductor-insulator-semiconductor (SIS) structure

12 May 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (10) , 376-377
https://doi.org/10.1049/el:19830260

Abstract

Ideal capacitance/voltage curves of Si(2)-SiO₂-Si(1) structure are computed in the absence of surface states and oxide changes with the SiO₂ thickness, conductivity types, impurity concentrations of Si(1) and (2) as parameters. Impurity concentrations of Si(1), (2) and SiO₂ thickness can be estimated from the measured capacitance/voltage curves by comparing them with the calculated ones as is the case with the conventional MOS structure.

Keywords

C/V CURVES
SI-SIO2-SI
SIO2 THICKNESSES
CAPACITANCE/VOLTAGE CHARACTERISTICS
CONDUCTIVITY TYPES
SIS STRUCTURE
SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR
IMPURITY CONCENTRATIONS

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