Static 7 GHz frequency divider IC based on a 2 μm Si bipolar technology
- 26 February 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (5) , 192-193
- https://doi.org/10.1049/el:19870135
Abstract
A static 8:1 frequency divider IC operating at up to 7 GHz has been realised using a preproduction silicon bipolar technology with 2 μm lithography. This technology is characterised by a self-aligned double polysilicon emitter-base structure and oxide wall isolation. The high upper frequency limit, not yet achieved with comparable 2 μm technologies, was attained by careful circuit design and optimisation.Keywords
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