Determination of grain boundary impurity effects in polycrystalline silicon

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Abstract
The relationships between the chemistry and composition of the intergrain regions, and the optoelectronic properties of the grain boundaries are examined. Specifically, two impurity related mechanisms are reported. The first is the segregation of oxygen to the grain boundaries during thermal processing of the materials or devices. The oxygen localization at the boundary directly correlates with the electrical activation of these regions. The second is the passivation of the grain boundaries by incorporation of hydrogen in the intercrystalline regions. The localization of the hydrogen at these defects is demonstrated by SIMS, and the reaction between the hydrogen and the oxygen is indicated.

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