Interference enhanced Raman scattering from very thin absorbing films

Abstract
A new method of obtaining Raman spectra from a very thin highly absorbing films (α≳105 cm−1) is described. The technique which is termed interference enhanced Raman scattering (IERS) is shown theoretically to produce a gain in the scattered intensity of 10–103 (depending on the optical constants of the material) over that expected from a thick sample using the conventional Raman backscattering configuration. The potential of the method is demonstrated experimentally using tellurium, and a gain of 20 is obtained.

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