Precision electron beam exposure system, EB52
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 705-708
- https://doi.org/10.1051/rphysap:019780013012070500
Abstract
A precision electron beam exposure system, EB52, has been developed for mask making and direct wafer exposure for less than 2 μm minimum pattern size. This paper describes the system control method and performance of the system components which are designed considering positioning error factors, and an example of chrome mask fabrication by the system, in which overlay accuracy of ± 0.2 μm has been achieved with deflection distortion correction and beam shift correction using a standard mark on the X-Y stageKeywords
This publication has 1 reference indexed in Scilit:
- EBES: A practical electron lithographic systemIEEE Transactions on Electron Devices, 1975