Diffusion and dimer exchange in surfactant-mediated epitaxial growth
- 16 May 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (20) , 3190-3193
- https://doi.org/10.1103/physrevlett.72.3190
Abstract
We propose a new dimer-exchange mechanism for surfactant-mediated epitaxial growth of Ge on Si(001) surfaces based on first-principles total-energy calculations. We find that, on Si(001) covered by As surfactants, Ge dimers are formed not on As dimers but between As-dimer rows, and then substitute for the As atoms at subsurface sites. This exchange process leads to As-capped needlelike growth of Ge along {11¯0} direction which prevents islanding at high Ge coverage.Keywords
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