Ab initiomolecular-dynamics study of defects on the reconstructed Si(001) surface
- 8 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (15) , 1909-1912
- https://doi.org/10.1103/physrevlett.65.1909
Abstract
We present a new defect model for the reconstructed Si(001) surface. Ab initio molecular-dynamics simulations at finite temperature show the existence of interstitial dimers which are recessed from the surface. These dimers and adjacent on-surface dimers are both symmetric. The possibility that missing dimer vacancies observed by scanning tunneling microscopy contain these new surface defects is pointed out.This publication has 34 references indexed in Scilit:
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