Tunnel Injection into Gate Oxide Traps

1 April 1975

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium

No. 07350791,p. 26-33
https://doi.org/10.1109/irps.1975.362672

Abstract

An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co60 irradiation. The results are related to long-term drift of threshold voltage.

Keywords

SILICON
TUNNELING
DENSITY MEASUREMENT
VOLTAGE
ELECTRODES
ENERGY MEASUREMENT
MOSFETS
FREQUENCY MEASUREMENT
PROPULSION
LABORATORIES

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