Dielectric breakdown induced by sodium in MOS structures
- 1 January 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (1) , 527-528
- https://doi.org/10.1063/1.1661931
Abstract
Scanning internal photoemission measurements of several MOS structures, which contained mobile sodium ions, displayed nonuniform contact barriers at the Si–SiO2 interface. A direct correspondence was found between the areas at which the contact barrier was a minimum and the point at which subsequent dielectric breakdown occurred. The direct relationship between barrier reduction and breakdown may result from enhanced electronic injection at the areas with a lower contact barrier.This publication has 8 references indexed in Scilit:
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