Noise characteristics of a cryogenically cooled GaAs metal semiconductor field effect transistor at 4 MHz
- 1 February 1984
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 55 (2) , 256-257
- https://doi.org/10.1063/1.1137737
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- UHF ultra low noise cryogenic FET preamplifierJournal of Physics E: Scientific Instruments, 1982
- Approaching the Quantum "Limit" for Force DetectionPhysical Review Letters, 1981
- GaAs junction field effect transitors for low-temperature environmentsPublished by AIP Publishing ,1978
- Performance of GaAs MESFET's at Low Temperatures (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1976
- Semiconductor devices suitable for use in cryogenic environmentsCryogenics, 1974