Localization and Magnetism of an Interstitial Iron Impurity in Silicon
- 24 September 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 53 (13) , 1256-1259
- https://doi.org/10.1103/physrevlett.53.1256
Abstract
The apparent dichotomy between the covalently delocalized nature of Si: Fe (as suggested by its reduced hyperfine field, its extended spin density, and the occurrence of two closely spaced stable charge states within 0.4 eV) and the atomically localized picture (suggested, among other reasons, by the stability of a high-spin ground-state configuration) is resolved through a self-consistent Green's-function calculation with the self-interaction-corrected local-spin-density formalism.Keywords
This publication has 25 references indexed in Scilit:
- On the Question of Multiple Charge States of Interstitial Fe and Cr in SiliconPhysica Status Solidi (a), 1983
- Hyperfine interactions from EPR of iron in siliconSolid State Communications, 1983
- Transition metals in siliconApplied Physics A, 1983
- Interstitial iron and iron-acceptor pairs in siliconApplied Physics A, 1982
- Electron paramagnetic resonance on iron-related centers in siliconPhysical Review B, 1982
- Theory of interstitial transition-metal impurities in siliconPhysical Review B, 1981
- Comparison of Mössbauer spectra of57Co in silicon for high-temperature ion-implanted and for diffused samplesPhysica Status Solidi (a), 1979
- Covalency and hyperfine structure of (3d)5 — Ions in crystal fieldsPhysics Letters A, 1967
- Mössbauer effect isomer shift of Fe57 in silicon and germaniumJournal of Physics and Chemistry of Solids, 1962
- Contribution of the Fermi Contact Term to the Magnetic Field at the Nucleus in FerromagnetsPhysical Review Letters, 1960