Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings
- 1 April 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (14) , 1984-1986
- https://doi.org/10.1063/1.115647
Abstract
A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.Keywords
This publication has 0 references indexed in Scilit: