Impurity Effect upon Mobility in Heavily Doped Silicon
- 1 March 1961
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 16 (3) , 577
- https://doi.org/10.1143/jpsj.16.577
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Tunneling Probability in Germanium p–n JunctionsJournal of the Physics Society Japan, 1960
- Conductivity Mobilities of Electrons and Holes in Heavily Doped SiliconPhysical Review B, 1957