Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor

Preprint

8 December 2000

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0012140

Abstract

We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.

Keywords

SINGLE ELECTRON TUNNELING
MECHANICAL PROPERTIES
ELECTRON TRANSISTOR
INFLUENCE OF NANO
NANO MECHANICAL
TRANSISTOR
VIBRATING
TUNNELING

All Related Versions

Version 1, 2000-12-08, ArXiv
Published version: Europhysics Letters, 54 (5), 668.

This publication has 0 references indexed in Scilit: