Inversion of conduction type in thin InSb films prepared on glass substrates

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Abstract
Thin InSb films with average thicknesses of 0.15 and 0.4 μm were prepared on glass substrates by evaporation of In and Sb to obtain homogeneous and In droplets-free films. The substrate-temperature dependence of some properties of the film was investigated between 350 and 470 °C. Highly (111)-oriented 0.15an 450 °C, respectively. It was observed that 0.4-μm-thick films show p-type conduction in the extrinsic temperature range. The cause of these phenomena was investigated using a secondary ion mass spectroscopy in-depth analysis. As a representative in the constituents of glass substrates, the diffusion of Na, K, Mg, Ca, Ba, B, Al, Si, Pb, and O atoms into the InSb films was investigated more precisely. Among these atoms, it was estimated that K, Mg, and Si atoms could act as acceptors in an InSb crystal contributing to the inversion of conduction type.