Improved Characteristics of Blue and Green InGaN-Based Light-Emitting Diodes on Si Grown by Metalorganic Chemical Vapor Deposition

15 June 2002

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 41 (Part 2, No) , L663-L664
https://doi.org/10.1143/jjap.41.l663

Abstract

We report significantly improved characteristics of InGaN multiple-quantum well blue and green light-emitting diodes (LEDs) on Si (111) substrates using metalorganic chemical vapor deposition. A high-temperature-grown thin AlN layer and AlN/GaN multilayers have been used for the growth of high-quality active layer on Si substrate. The blue LED on Si exhibited an operating voltage of 4.1 V, a series resistance of 30 Ω, an optical output power of 18 µW and a peak emission wavelength of 478 nm with a full width at half maximum of 22 nm at 20 mA drive current. These characteristics are comparable to those of LED on sapphire substrate. The green LED was also fabricated on Si substrate successfully.

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