Chemical vapour deposition of silicon carbide: An X-ray diffraction study
- 1 May 1988
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 23 (5) , 1632-1636
- https://doi.org/10.1007/bf01115701
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Use of the Voigt function in a single-line method for the analysis of X-ray diffraction line broadeningJournal of Applied Crystallography, 1982
- Caractérisation mécanique des surfaces par diffraction XMatériaux & Techniques, 1981
- Chemical Vapor Deposition of Silicon Carbide and Silicon Nitride—Chemistry's Contribution to Modern Silicon CeramicsAngewandte Chemie International Edition in English, 1979