Anisotropic magnetotransport in weakly coupled GaAs-As multiple quantum wells
- 15 December 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (17) , 12362-12368
- https://doi.org/10.1103/physrevb.38.12362
Abstract
We have studied for the first time the effect of an applied magnetic field on the tunneling current flowing perpendicular to a weakly coupled multiple-quantum-well structure. Due to the two-dimensional density of states of the electron gas in each well, tunneling among the wells occurs only when the states in the adjacent wells are nearly degenerate. An applied magnetic field parallel to the superlattice removes the degeneracy and leads to a variety of striking phenomena in the current-voltage characteristics. In strong contrast to this, when the magnetic field is perpendicular to the superlattice, the degeneracy is preserved and there is no significant change in the characteristics.Keywords
This publication has 14 references indexed in Scilit:
- Observations of Magnetoquantized Interface States by Electron Tunneling in Single-Barrier HeterostructuresPhysical Review Letters, 1987
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- Resonant tunneling in magnetic field: Evidence for space-charge buildupPhysical Review B, 1987
- Effective-mass change of electrons in Si inversion layers under parallel magnetic fieldsPhysical Review B, 1987
- Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domainPhysical Review B, 1987
- Effect of a Transverse Magnetic Field on the Tunnel Current through Thick and Low Semiconductor BarriersEurophysics Letters, 1987
- Electronic Transport and Depletion of Quantum Wells by Tunneling through Deep Levels in Semiconductor SuperlatticesPhysical Review Letters, 1986
- Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructuresPhysical Review B, 1986
- Sequential Single-Phonon Emission in GaAs-Tunnel JunctionsPhysical Review Letters, 1984
- Effect of a parallel magnetic field on surface quantizationSolid State Communications, 1971