High-detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
- 25 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (4) , 296-298
- https://doi.org/10.1063/1.99918
Abstract
We report the first high-detectivity (D*=1.0×1010 cm (Hz)1/2/W), high-responsivity (Rv =30 000 V/W) GaAs/AlxGa1−xAs multiquantum well detector, sensitive in the long-wavelength infrared band at λ=8.3 μm (operating at a temperature of T= 77 K). Because of the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high-speed GaAs field-effect transistors, large focal plane arrays of these detectors should be possible.Keywords
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