Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (12) , 2571-2579
- https://doi.org/10.1109/T-ED.1987.23356
Abstract
This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmaxabove 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BVCBO) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.Keywords
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