p-i-n diodes for the modulation of mm-wave frequencies
- 1 January 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 23 (1) , 61-63
- https://doi.org/10.1109/T-ED.1976.18349
Abstract
A theoretical expression for a figure of merit Qswith respect to RF losses and switching time for p-i-n diodes is given. A fabrication technique is presented which is especially suited to obtain a large Qs. The static, dynamic, and RF data of the diodes and their performance in a 180-degree phase shift modulator at a frequency of 35 GHz and a bitrate of 256 Mbit/s are presented.Keywords
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