Dislocation arrays produced in germanium by room-temperature deformation
- 1 February 1963
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 8 (86) , 301-310
- https://doi.org/10.1080/14786436308211127
Abstract
A metallographic study has established that dislocation arrays can be produced in germanium single crystals by local impact at room temperature. The arrays appear as extensions to true cracks and have the same morphology; neither lie in {111} planes but on curved surfaces determined primarily by the stress field. The evidence suggests that the dislocations exist in the form of large loops. The origin of the dislocation arrays is discussed.Keywords
This publication has 8 references indexed in Scilit:
- A Metallographic Investigation of the Damaged Layer in Abraded Germanium SurfacesJournal of the Electrochemical Society, 1961
- On a new mode of deformation in indium antimonidePhilosophical Magazine, 1959
- The orientation dependence of etching effects on germanium crystalsActa Metallurgica, 1959
- Effects of environment on the fracture behavior of germaniumActa Metallurgica, 1958
- Dislocation Etch Pits in Germanium†Journal of Electronics and Control, 1958
- On the mechanical properties of indium antimonidePhilosophical Magazine, 1957
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1956
- Observations of Dislocations in Lineage Boundaries in GermaniumPhysical Review B, 1953