High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistors
- 1 June 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (6) , 214-216
- https://doi.org/10.1109/EDL.1984.25892
Abstract
The fabrication and high-frequency performance of MBE-grown AlGaAs/GaAs heterojunction bipolar transistors (HBT's) is described. The achieved gain-bandwidth product fTis 25 GHz for a collector current density Jcof 1 × 104A/cm2and a collector-emitter voltage VCEof 3 V.fTcontinues to increase with the collector current in the high current density region over 1 × 104A/cm2with no emitter crowding effect nor Kirk effect. The limitation on fTin fabricated devices is found to be caused mainly by the emitter series resistance.Keywords
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