Technique used in Hall effect analysis of ion implanted Si and Ge

• 1 March 1970
• journal article
• Published by Elsevier in Solid-State Electronics
• Vol. 13  (3) , 317-335
• https://doi.org/10.1016/0038-1101(70)90183-8

Abstract

Keywords

• HALL EFFECT
• ELECTRIC CONDUCTIVITY
• ION IMPLANTATION
• ION BEAM