Model for ion-assisted thin-film densification

Publisher Website
Google Scholar
Abstract
A theoretical model to explain the densification of thin films by ion assistance is described. The model takes advantage of previously developed fast methods for three‐dimensional Monte Carlo cascade computations and assumes a low thermal adatom mobility. It is shown that ion incorporation and recoil implantation of surface atoms lead to a film densification slightly below the surface of a growing film and that the density enhancement depends on the ability of vapor atoms to refill surface vacancies which are created by sputtering and driven‐in atoms. In particular, the time‐dependent mass density profiles evolving during the growth of a 600‐eV, oxygen‐assisted, vapor‐deposited ZrO2 film has been determined and good agreement with experiment is obtained.