Structure and Deposition Mechanism of Molybdenum Nitride Films Prepared by Reactive Sputtering

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Abstract
The structure and deposition mechanism of reactively sputtered films prepared by sputtering molybdenum metal in argon gas mixed with nitrogen are investigated. In argon alone, a b.c.c. Mo film is deposited on the glass, carbon film and NaCl substrates. In a mixed atmosphere of argon and nitrogen, f.c.c. γ-Mo2N and hex. δ-MoN films are obtained on carbon film substrates. The lattice constant of γ-Mo2N shows a considerable change in the range from 4.14 to 4.28 Å as the partial pressure of nitrogen increases. A correlation between the product at the surface of the molybdenum target formed during sputtering and the structure of the films on various substrates, and the effect of the substrate temperature on the structure of the films show that the molybdenum nitrides are formed by the combination of sputtered molybdenum atoms with nitrogen at the substrate surface irrespective of the partial pressure of nitrogen.

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