Recombination in heavily doped planar diodes
- 1 May 1979
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3478-3483
- https://doi.org/10.1063/1.326342
Abstract
A process is described which produces a shallow pn‐junction device with heavy surface doping and very high collection efficiency. Electron‐beam techniques were used to measure collection efficiency as a function of depth and to modulate the surface recombination velocity through an MOS capacitor fabricated on the diode. The results of these studies indicate that surface recombination is the dominant effect on carrier loss.This publication has 6 references indexed in Scilit:
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