Temperature effects in semiconductor quantum dot lasers

This publication has 9 references indexed in Scilit:

• Red-Emitting Semiconductor Quantum Dot Lasers
  Science, 1996
• Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser
  Applied Physics Letters, 1996
• Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer
  Electronics Letters, 1996
• Room temperature lasing from InGaAs quantum dots
  Electronics Letters, 1996
• Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
  Applied Physics Letters, 1996
• Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
  IEEE Photonics Technology Letters, 1996
• Room-temperature operation of In _0.4 Ga _0.6 As/GaAsself-organised quantum dot lasers
  Electronics Letters, 1996
• Temperature effects on the radiative recombination in self-assembled quantum dots
  Surface Science, 1996
• InAs self-assembled quantum dots on InP by molecular beam epitaxy
  Applied Physics Letters, 1996