An Etch for Delineation of Defects in Silicon
- 1 May 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (5) , 1140-1145
- https://doi.org/10.1149/1.2115767
Abstract
An investigation of the system shows that preferential etching of crystal defects on silicon surfaces is very sensitive to the concentration ratio of to . This leads to development of a new etch consisting of one part by volume of and one part of 49% . This etch can delineate a wide variety of crystal defects with sharp definition. The shape of dislocation etch pits is uniquely determined by the orientation of wafer surfaces and dislocation lines.Keywords
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