An infra-red study of defects produced in n-type silicon by electron irradiation at low temperatures
- 15 February 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (4) , 271-274
- https://doi.org/10.1016/0038-1098(71)90175-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Low temperature electron irradiation of silicon containing carbonSolid State Communications, 1970
- Vibrational absorption of carbon and carbon-oxygen complexes in siliconJournal of Physics and Chemistry of Solids, 1969
- INFRARED ABSORPTION BANDS IN CARBON- AND OXYGEN-DOPED SILICONApplied Physics Letters, 1968
- Infrared Studies of Defect Production in-Type Si: Irradiation-Temperature DependencePhysical Review B, 1967
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961