Low linewidth enhancement factor for InGaAsP and InGaAIAs multiple quantum well lasers
- 1 September 1991
- journal article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 23 (8) , 1031-1035
- https://doi.org/10.1007/bf00611439
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Carrier induced differential refractive index and detuning effect in GaInAsP Scmqw lasers with 3,5 and 9 wellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Spectral linewidth and resonant frequency characteristics of InGaAsP/InP multiquantum well lasersIEEE Journal of Quantum Electronics, 1989
- Carrier-induced refractive-index change in quantum-well lasersOptics Letters, 1988
- Coherent optical fiber transmissionJournal of Lightwave Technology, 1987
- Linewidth broadening factor in semiconductor lasers--An overviewIEEE Journal of Quantum Electronics, 1987
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982