Monolithic pin -HEMT amplifier on an InP substrate grown by OMVPE for long-wavelength fibre optic communications

15 September 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (19) , 1201-1202
https://doi.org/10.1049/el:19880816

Abstract

We have monolithically integrated a GaInAs pin-photodiode and an n-AlInAs/GaInAs HEMT amplifier on an InP substrate by OMVPE for long-wavelength fibre optic communications. The response of the pin-HEMT amplifiers for 1.6 Gbit/s (NRZ) signals has been obtained.

Keywords

1.6 GBIT/S
ALINAS-GAINASINP
PIN-HEMT AMPLIFIERS
OMVPE
NRZ
PIN-PHOTODIODE
INP
HEMT AMPLIFIER
LONG-WAVELENGTH FIBRE OPTIC COMMUNICATIONS

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