Hydrogen evolution in aluminum plasma deposited silicon nitride layered structures
- 25 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (21) , 1527-1529
- https://doi.org/10.1063/1.98254
Abstract
Blisters and voids in aluminum plasma enhanced chemical vapor deposited silicon nitride layered structures are studied. Results from evolved gas analysis have indicated release of hydrogen. Hydrogen evolution from silicon/nitride/aluminum/phosphosilicate glass/silicon layered structure showed a sharp peak in the temperature range between 580 and 660 °C. The results indicated that the accumulation of high pressure hydrogen gas evolved from the silicon nitride film and trapped at the aluminum silicon nitride interface could be the most dominant mechanism of the blister and void formation.Keywords
This publication has 2 references indexed in Scilit:
- Auger electron spectroscopy evaluation of voids in aluminum–1% silicon integrated circuit metallizationJournal of Vacuum Science & Technology B, 1986
- Properties of Plasma‐Deposited Silicon NitrideJournal of the Electrochemical Society, 1979