Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy
- 7 February 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (6) , 733-735
- https://doi.org/10.1063/1.111049
Abstract
We have investigated the gas‐source molecular beam epitaxy growth of GaAs on a (001) Ge surface, off‐cut 6° towards the [110]. Initiation of GaAs on Ge with the typical procedure of using a self‐terminating As layer invariably produces poor GaAs surface morphology and generates a plethora of antiphase boundaries, despite the large miscut of the (001) surface. However, initiation of GaAs growth with approximately 1 ML (monolayer) of Ga results in single‐domain films with excellent surface morphology. We conclude that the Ga monolayer prevents the Ge surface from forming a high step density surface which is established when Ge is exposed to As2.Keywords
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