EFFECT OF DEPOSITION TEMPERATURE ON PLASMA GROWN ALUMINUM OXIDE FILMS
- 1 September 1988
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 49 (C4) , C4-409
- https://doi.org/10.1051/jphyscol:1988486
Abstract
The physical and electrical properties of aluminum oxide films deposited from aluminumtrimethyl under plasma conditions have been studied as a function of the silicon substrate temperature. It is shown that an increase of the temperature enhances the oxidation reaction and gives dense films. The C(V) characterization of MOS structures shows a large scattering in the results. However higher temperature (up to 300°C) gives lower flat band voltage, lower hysteresis which indicates a lowering of the free charges in the oxideKeywords
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