Characteristics of field-effect transistor using fluorinated amorphous-silicon (a-Si:F)

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Abstract
Thin-film field-effect transistors are fabricated by use of fluorinated amorphous-silicon alloy (a-Si:F) containing no hydrogen. The characteristics of transistors such as on-off current ratio are comparable to those of hydrogenated amorphous-silicon transistors and are unchanged after 600°C annealing.