Poly-Si and a-Si: H MOS Photodiodes for Large-Area, High Spatial Resolution Photosensor Arrays

Publisher Website
Google Scholar
Abstract
Performances of poly-Si and a-Si: H MOS photodiodes produced by anodization are investigated. It is shown that these anodized MOS photodiodes posses high reverse breakdown voltage, high speed and acceptable sensitivity as compared with those of single-crystal Si pho-todiodes and a-Si: H p-i-n photodiodes. Enhancement of the reverse breakdown voltage and yields by anodization is achieved, and it is related to selective passivation of material defects by anodization. Such poly-Si and a-Si: H MOS photodiodes appear promising for application in largearea functional photosensor arrays with high spatial resolution.

This publication has 0 references indexed in Scilit: