Calibration Methods for Microwave Wafer Probing
- 1 January 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 84, 78-82
- https://doi.org/10.1109/mcs.1984.1113609
Abstract
A new level of accuracy in the measurement of microwave parasitic has been achieved, due to the combined development of microwave wafer probes and on-wafer impedance standards. Repeatable losses and reflections in the probes can be readily removed from measured data, but radiation losses and crosstalk cannot be corrected and must be minimized. Oneport and twoport on-wafer standards for several probe footprints are shown, and their performance verified.Keywords
This publication has 2 references indexed in Scilit:
- A DC-12 GHz Monolithic GaAsFET Distributed AmplifierIEEE Transactions on Microwave Theory and Techniques, 1982
- Simplified GaAs m.e.s.f.e.t. model to 10 GHzElectronics Letters, 1977