Deep levels introduced during electron-beam deposition of metals on n-type silicon
- 15 February 1984
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 988-993
- https://doi.org/10.1063/1.333155
Abstract
Near‐surface damage introduced during fabrication of Schottky barrier diodes (SBDs) by electron‐beam (E‐beam) deposition of various metals on n‐type silicon has been investigated using deep level transient spectroscopy. The main defect was observed at Ec −0.42 eV and is annealed out at 400 °C. The interaction of E‐beam deposition induced defects with defects which had been introduced in the substrate by irradiation with high‐energy electrons was also observed in Pd and Pd/Au SBDs. Therefore erroneous conclusions can be made when using SBDs fabricated by E‐beam deposition to characterize defects introduced by some other process near the interface of a SBD.This publication has 10 references indexed in Scilit:
- Characterization of Reactive Ion Etched Silicon Surface by Deep Level Transient SpectroscopyJournal of the Electrochemical Society, 1982
- Process conditions affecting hot electron trapping in dc magnetron sputtered MOS devicesJournal of Vacuum Science and Technology, 1981
- Energy dependence of deep level introduction in electron irradiated GaAsJournal of Applied Physics, 1980
- Deep levels in scanned electron-beam annealed siliconApplied Physics Letters, 1980
- Phonon assisted tunnel emission of electrons from deep levels in GaAsJournal de Physique, 1979
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- Radiation effects of electron-beam metal depositions on IGFET’sJournal of Vacuum Science and Technology, 1978
- Enhanced diffusion mechanismsRadiation Effects, 1978
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- Electron-irradiation-induced divacancy in lightly doped siliconJournal of Applied Physics, 1976