Steady-state transport under non-equilibrium conditions in undoped and phosphorus doped a-Si:H at very low temperature
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 90 (1) , 183-186
- https://doi.org/10.1016/s0022-3093(87)80409-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Determination of the mobility gap in amorphous silicon from a low temperature photoconductivity measurementJournal of Non-Crystalline Solids, 1985
- Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline siliconPhysical Review B, 1985
- Photoconductivity and photoluminescence of a-Si:H at low temperatureJournal of Non-Crystalline Solids, 1984