Evaluation of Al ion implanted 6H-SiC single crystals
- 1 April 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 74 (1-2) , 131-133
- https://doi.org/10.1016/0168-583x(93)95029-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Optimum semiconductors for high-power electronicsIEEE Transactions on Electron Devices, 1989
- Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphizationJournal of Materials Research, 1988
- Diffusion of ion implanted aluminum in silicon carbideThe Journal of Chemical Physics, 1982