NiSi2-Si infrared Schottky photodetectors grown by molecular beam epitaxy
- 15 October 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (8) , 734-736
- https://doi.org/10.1063/1.93659
Abstract
We report the first infrared sensitive (λ≳1 μm) Schottky photodetector using nickel disilicide (NiSi2) grown expitaxially on a silicon substrate by molecular beam expitaxy. Measurements utilizing the 1.32‐μm line of a neodymium yttrium aluminum garnet (Nd:YAG) laser indicate a barrier height of 0.64 eV and a quantum efficiency of 0.22%. The use of silicon technology has the potential of integrating the detector with electronics on a monolithic chip of silicon. Such systems are attractive for optical communication applications in the 1.3‐μm wavelength region.Keywords
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