Surface nuvleation kinetics of molecular beam epitaxial doped (001) and (111) CdTe
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4) , 354-361
- https://doi.org/10.1016/0022-0248(90)90742-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- p-type CdTe epilayers grown by photoassisted molecular beam epitaxyApplied Physics Letters, 1986
- (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxyApplied Physics Letters, 1986
- Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxyApplied Physics Letters, 1986
- Growth and characterization of Hg1−xMnxTe grown by molecular beam epitaxyApplied Physics Letters, 1985
- Molecular beam epitaxyReports on Progress in Physics, 1985
- (100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAsApplied Physics Letters, 1985
- Donors and acceptors in tellurium compounds; The problem of doping and self-compensationJournal of Crystal Growth, 1985
- Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregationSurface Science, 1985
- Deep Levels of High Resistivity Sb Doped CdTeJapanese Journal of Applied Physics, 1985
- Temporal intensity variations in RHEED patterns during film growth of GaAs by MBEVacuum, 1983