InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
- 1 August 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (8A) , L965-967
- https://doi.org/10.1143/jjap.34.l965
Abstract
By introducing InGaP tensile-strained layers as barriers of InAsP compressively strained multiple quantum wells, InAsP/InGaP strain-compensated multiple quantum wells with high crystalline quality were successfully grown by metalorganic chemical vapor deposition. For the first time, a laser, emitting at 1.2 µ m, consisting of all-ternary quantum wells as an active layer was fabricated. The threshold current density of 1 kA/cm2 was obtained without the use of a separate confinement heterostructure layer for a cavity length of 1000 µ m.Keywords
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