An ohmic nanocontact to GaAs
- 10 May 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (19) , 2869-2871
- https://doi.org/10.1063/1.124041
Abstract
The formation and characterization of nanometer-size, ohmic contacts to n-type GaAs substrates are described. The nanocontacts are formed between a single-crystalline, nanometer-size Au cluster and a GaAs structure capped with layer of low-temperature-grown GaAs (LTG:GaAs). An organic monolayer of xylyl dithiol (p-xylene-α,α′- dithiol; C8H10S2) provides mechanical and electronic tethering of the Au cluster to the LTG:GaAs surface. The I(V) data of the Au cluster/xylyl dithiol/GaAs show ohmic contact behavior with good repeatability between various clusters distributed across the surface. The specific contact resistance is determined to be 1×10−6 Ω cm2. Current densities above 1×106 A/cm2 have been observed.This publication has 16 references indexed in Scilit:
- Ellipsomicroscopy for surface imaging: A novel tool to investigate surface dynamicsJournal of Vacuum Science & Technology A, 1998
- Nanometer-scale gap control for low voltage and high current operation of field emission arrayJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Kondo effect in a single-electron transistorNature, 1998
- Annealing stability and device application of nonalloyed ohmic contacts using a low temperature grown GaAs cap on thin n+ GaAs layersApplied Physics Letters, 1997
- A survey of ohmic contacts to III-V compound semiconductorsThin Solid Films, 1997
- A single-electron transistor made from a cadmium selenide nanocrystalNature, 1997
- Inhibited oxidation in low-temperature grown GaAs surface layers observed by photoelectron spectroscopyApplied Physics Letters, 1996
- Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopyApplied Physics Letters, 1996
- Low-Temperature Grown III-V MaterialsAnnual Review of Materials Science, 1995
- Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAsApplied Physics Letters, 1995